Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Capacitance−voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma the resulting oxide thickness 2 nm) have been studied. The obtained reveal positive fixed charge density ∼ (1−6) · 10^11 cm^(−2). ratio between slow states band gap width is almost independent presence, value (4−8) cm^(−2) eV^(−1). proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence fast states. Films CdHgTe grown are proved to be much more sensitive process oxidation plasma.